作者: Heng Liu, Feng Tian Zhang, Wei Su, Fu Tang Zhang

摘要: The introduced resonant accelerometer makes use of the equivalent electrostatic stiffness to sense the acceleration. The sensitivity can be adjusted by changing the applied sensing voltage. But the no-linearity problem between the output frequency and applied acceleration is difficult to calculate the sensitivity and analysis its influence directly. When the stiffness of the fold beam is much smaller than the vibrating beam, the analytic sensitivity expression is given. The relationship between the sensitivity and the structure critical dimension is easily obtained in the design stage. A resonant accelerometer with sensitivity of 62Hz/g is designed and fabricated by bulk-silicon dissolved processes. The experiment finds there is the critical dimension loss in the fabrication process, which makes the sensitivity change; the same frequency disturbance will influence the closed-loop phase equilibrium. The equivalent interface model is built for the signal processes in the future. The frequency modulation and re-modulation is suggested to eliminate the disturbance. Vacuum package should be adopt to enlarge the weaken output signal.

122

作者: Chun Ping Tang, Liang Liang Zhang

摘要: Non-linear numerical simulation is done on A-type super high pier by using finite element analysis software ANSYS, obtaining the node stress distribution under load in the node area taken in the sequential layer analysis of overall mode. The conclusion is mainly as follows: the change of width and thickness of cross beam exerts slight impact on the maximum stress of the node while the change of cross beam depth impacts the node stress much. From the computation, it can be concluded that proper reduction of cross beam depth is beneficial to the node stress.

1329

作者: Yu Liu, Shen Liu, Wen Ji Xiong, Hong Ming Zeng

摘要: Establishing the system model of free beam vibration gyro under the influence of the Support structure, deriving and analyzing its vibration performance, comparison between model simulation through ANSYS software and relative theoretical calculation indicates that the relative error is less than 0.25%. Researches on the relations among system sensitivity, bandwidth, shock resistance and anti-interference ability of its model and sizes of Support structure contribute to principles of system optimization design and a set of design parameters: free beam (50mm×4.1mm×4.12mm), cylindrical Support structure(radius0.25mm×2.46mm), the performance of model is as: system driving frequency (8589.8HZ), bandwidth (39.4HZ), shock resistance (411.02g) and anti-interference frequency (above2381.3HZ).

476

作者: Yutaka Fukui, Katsutoshi Sugawara, Kohei Adachi, Hideyuki Hatta, Kazuya Konishi, Koji Sadamatsu, Nobuo Fujiwara, Shingo Tomohisa, Satoshi Yamakawa

摘要: An optimized layout for a trench-gate SiC-MOSFET with a self-aligned Bottom P-Well (BPW) was investigated for reduction of the specific on-resistance and switching loss. The static and dynamic characteristics of trench-gate MOSFETs with lattice and stripe in-plane structures were evaluated by varying the distance between neighboring BPWs (*d*_{BPWs}). For the stripe structure, more significant improvements on the specific on-resistance (*R*_{on,sp}), gate-source threshold voltage (*V*_{th}) were achieved compared with the lattice structure, which was found to be due to the difference in the spread of the depletion layer and the channel planes in the device.

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