Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes
Morphology and crystal-quality of InAs/In0.53Ga0.47As/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes have been studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on the growth modes. After optimizing the dots’ growth modes, dots’ size dispersion and crystal-quality are both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence (PL) peak-intensity from single QD. When the dots are buried, the dot size decrease compared with the free-standing dots due to the soon capping layer deposition during dots’ being buried. The thermal activation energy measured is comparable to the valence-band offset in the QD system calculated by 8 kp theory model. This indicates the PL quenching induced by the interface defects is suppressed due to the defect density lowering in the QDs grown by such optimized growth mode.
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Z. Y. Yin et al., "Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes", Advanced Materials Research, Vol. 31, pp. 17-19, 2008