Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition

摘要:

文章预览

Pulsed laser deposition (PLD) technique is a very powerful method for fabricating various oxide thin films due to its native merits. In this study, gallium and nitrogen co-doped ZnO thin films (0.1 at.%) were deposited at different temperatures (100-600°C) on sapphire (001) substrates by using PLD. X-ray diffractometer, atomic force microscope, spectrophotometer, and spectrometer were used to characterize the structural, the morphological and the optical properties of the thin films. Hall measurements were also carried out to identify the electrical properties of the thin films.

信息:

期刊:

编辑:

Wei Pan and Jianghong Gong

页数:

322-325

引用:

G.X. Liu et al., "Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition", Key Engineering Materials, Vols. 368-372, pp. 322-325, 2008

上线时间:

February 2008

输出:

价格:

$38.00

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