The Study of Se- and Si-Implanted GaAs by Slow Positrons

摘要:

文章预览

信息:

期刊:

编辑:

Zs. Kajcsos and Cs. Szeles

页数:

1387-1390

引用:

S. Fujii et al., "The Study of Se- and Si-Implanted GaAs by Slow Positrons", Materials Science Forum, Vols. 105-110, pp. 1387-1390, 1992

上线时间:

January 1992

输出:

价格:

$38.00