Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption

摘要:

文章预览

信息:

期刊:

编辑:

Zs. Kajcsos and Cs. Szeles

页数:

1439-1442

引用:

P.J. Simpson et al., "Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption ", Materials Science Forum, Vols. 105-110, pp. 1439-1442, 1992

上线时间:

January 1992

输出:

价格:

$41.00