Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD

摘要:

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信息:

期刊:

编辑:

Tsunemasa Taguchi

页数:

351-356

引用:

L. Lu et al., "Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD ", Materials Science Forum, Vols. 117-118, pp. 351-356, 1993

上线时间:

January 1993

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价格:

$38.00

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