Characterization of the Interface Ta/GaAs in Schottky Barrier Structures Prepared by Low Energy RF Sputtering with X-Ray Photoemission, TEM and Optical Transmittance Measurements

摘要:

文章预览

信息:

期刊:

编辑:

Ph. Komninou and A. Rocher

页数:

463-466

引用:

P. Gladkov et al., "Characterization of the Interface Ta/GaAs in Schottky Barrier Structures Prepared by Low Energy RF Sputtering with X-Ray Photoemission, TEM and Optical Transmittance Measurements ", Materials Science Forum, Vols. 126-128, pp. 463-466, 1993

上线时间:

January 1993

输出:

价格:

$38.00

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