Optically Detected Magnetic Resonance Investigations on Rapidly Thermally Oxidized Porous Silicon
p.1459
p.1459
The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon
p.1463
p.1463
Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si
p.1469
p.1469
Electrical Characterization of Surface Defects on Porous p-Type Silicon
p.1475
p.1475
Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface
p.1481
p.1481
Defects in As-Prepared and Thermally Oxydized Porous Silicon
p.1487
p.1487
Carbon as a Probe of Edge-Defined Film-Fed Growth Silicon
p.1493
p.1493
Luminescence Associated with Rod-Like Defects in Czochralski Silicon
p.1499
p.1499
Phase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect Formation
p.1505
p.1505
Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface
摘要:
信息:
期刊:
Materials Science Forum (143-147卷)
编辑:
Helmut Heinrich and Wolfgang Jantsch
页数:
1481-1486
引用:
P. Deák et al., "Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface", Materials Science Forum, Vols. 143-147, pp. 1481-1486, 1994
上线时间:
October 1993
价格:
$41.00
允许: