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Optically Detected Magnetic Resonance Investigations on Rapidly Thermally Oxidized Porous Silicon
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The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon
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Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si
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Electrical Characterization of Surface Defects on Porous p-Type Silicon
p.1475

Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface
p.1481

Defects in As-Prepared and Thermally Oxydized Porous Silicon
p.1487

Carbon as a Probe of Edge-Defined Film-Fed Growth Silicon
p.1493

Luminescence Associated with Rod-Like Defects in Czochralski Silicon
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Phase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect Formation
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首页Materials Science ForumDefects in Semiconductors 17Luminescence due to Oxygen Induced Chemical...

Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface

摘要:

文章预览

信息:

期刊:

Materials Science Forum (143-147卷)

主题:

Defects in Semiconductors 17

编辑:

Helmut Heinrich and Wolfgang Jantsch

页数:

1481-1486

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1481

引用:

P. Deák et al., "Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface", Materials Science Forum, Vols. 143-147, pp. 1481-1486, 1994

上线时间:

October 1993

作者:

Peter Deák, G. Kostyál, M. Rosenbauer

关键字:

Semi-Empirical Calculations, Siloxene, Visible Luminescence

输出:

RIS, BibTeX

价格:

$38.00

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