Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As

摘要:

文章预览

信息:

期刊:

编辑:

Helmut Heinrich and Wolfgang Jantsch

页数:

289-294

引用:

A.C. Irvine et al., "Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As", Materials Science Forum, Vols. 143-147, pp. 289-294, 1994

上线时间:

October 1993

输出:

价格:

$38.00

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