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首页Materials Science ForumDefects in Semiconductors 17Direct Evidence for Gallium Defect Annealing Near...

Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al_0.22Ga_0.78As

摘要:

文章预览

信息:

期刊:

Materials Science Forum (143-147卷)

主题:

Defects in Semiconductors 17

编辑:

Helmut Heinrich and Wolfgang Jantsch

页数:

289-294

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.289

引用:

A.C. Irvine et al., "Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al_0.22Ga_0.78As", Materials Science Forum, Vols. 143-147, pp. 289-294, 1994

上线时间:

October 1993

作者:

A.C. Irvine, D.W. Palmer, J.S. Roberts

关键字:

AlGaAs, Annealing, Antisite, GaAs, Irradiation, Vacancy

输出:

RIS, BibTeX

价格:

$41.00

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