Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
p.265
p.265
The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP
p.271
p.271
Nitrogen-Hydrogen Complexes in GaP and GaAs
p.277
p.277
Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide
p.283
p.283
Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As
p.289
p.289
Defects in Electron Irradiated GaP and GaInP
p.295
p.295
Positron Lifetime Investigations of Electron Irradiated InP
p.299
p.299
Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements
p.305
p.305
Fine Structure of the (Fe2+, h) Bound States in GaP and InP
p.311
p.311
Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As
摘要:
信息:
期刊:
Materials Science Forum (143-147卷)
编辑:
Helmut Heinrich and Wolfgang Jantsch
页数:
289-294
引用:
A.C. Irvine et al., "Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As", Materials Science Forum, Vols. 143-147, pp. 289-294, 1994
上线时间:
October 1993
价格:
$38.00
允许: