Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells

摘要:

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信息:

期刊:

编辑:

Helmut Heinrich and Wolfgang Jantsch

页数:

611-616

引用:

H. J. von Bardeleben et al., "Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells", Materials Science Forum, Vols. 143-147, pp. 611-616, 1994

上线时间:

October 1993

输出:

价格:

$38.00