Simulation of Stacking Faults Effect on X-Ray Patterns of Silicon Carbide

摘要:

文章预览

信息:

期刊:

编辑:

R. Delhez and E.J. Mittemeijer

页数:

603-608

引用:

B. F. Palosz et al., "Simulation of Stacking Faults Effect on X-Ray Patterns of Silicon Carbide", Materials Science Forum, Vols. 166-169, pp. 603-608, 1994

上线时间:

July 1994

输出:

价格:

$38.00