Positron Experiments in δ-Doped GaAs(Si) Superlattices: Defect Properties and Positron Diffusion

摘要:

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信息:

期刊:

编辑:

Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West

页数:

551-553

引用:

T. Laine et al., "Positron Experiments in δ-Doped GaAs(Si) Superlattices: Defect Properties and Positron Diffusion", Materials Science Forum, Vols. 255-257, pp. 551-553, 1997

上线时间:

September 1997

输出:

价格:

$38.00