Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium
p.47
p.47
DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive 111In Atoms in Ge
p.53
p.53
Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC
p.59
p.59
Localization of Nondegenerate Electrons at Random Potential of Charged Impurities
p.65
p.65
Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge
p.71
p.71
Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As
p.77
p.77
Defects in SiGe
p.83
p.83
Acceptor States in Boron Doped SiGe Quantum Wells
p.91
p.91
Substitutional Carbon in Ge and Si1-xGex.
p.97
p.97
Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge
摘要:
信息:
期刊:
Materials Science Forum (258-263卷)
编辑:
Gordon Davies and Maria Helena Nazaré
页数:
71-76
引用:
I.V. Altukhov et al., "Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge", Materials Science Forum, Vols. 258-263, pp. 71-76, 1997
上线时间:
December 1997
价格:
$38.00
允许: