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首页Materials Science ForumDefects in Semiconductors 19Resonance Acceptor States and THz Generation in...

Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge

摘要:

文章预览

信息:

期刊:

Materials Science Forum (258-263卷)

主题:

Defects in Semiconductors 19

编辑:

Gordon Davies and Maria Helena Nazaré

页数:

71-76

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.71

引用:

I.V. Altukhov et al., "Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge", Materials Science Forum, Vols. 258-263, pp. 71-76, 1997

上线时间:

December 1997

作者:

I.V. Altukhov, E.G. Chirkova, M.S. Kagan, K.A. Korolev, V.P. Sinis, K. Schmalz, M.A. Odnoblyudov, I.N. Yassievich

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RIS, BibTeX

价格:

$38.00

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