Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes

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信息:

期刊:

编辑:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

页数:

573-576

引用:

A. Czerwinski et al., "Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes", Materials Science Forum, Vols. 264-268, pp. 573-576, 1998

上线时间:

February 1998

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价格:

$38.00