The Atomic Structure of Tilt Grain Boundaries in AIN/GaN Layers Grown on (0001) Sapphire: A Case Study, the Σ31 (11-4-70) Symmetric Grain Boundary

摘要:

文章预览

信息:

期刊:

编辑:

Pavel Lejcek and Václav Paidar

页数:

243-246

引用:

V. Potin et al., "The Atomic Structure of Tilt Grain Boundaries in AIN/GaN Layers Grown on (0001) Sapphire: A Case Study, the Σ31 (11-4-70) Symmetric Grain Boundary", Materials Science Forum, Vols. 294-296, pp. 243-246, 1999

上线时间:

November 1998

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价格:

$38.00