Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC

摘要:

文章预览

信息:

期刊:

编辑:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

页数:

1279-1282

引用:

K. Chatty et al., "Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC", Materials Science Forum, Vols. 338-342, pp. 1279-1282, 2000

上线时间:

May 2000

输出:

价格:

$38.00