Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs

摘要:

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信息:

期刊:

编辑:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

页数:

1299-1302

引用:

T. Ohshima et al., "Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs", Materials Science Forum, Vols. 338-342, pp. 1299-1302, 2000

上线时间:

May 2000

输出:

价格:

$38.00