Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage

摘要:

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信息:

期刊:

编辑:

G. Pensl, D. Stephani and M. Hundhausen

页数:

703-706

引用:

C. Banc et al., "Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage", Materials Science Forum, Vols. 353-356, pp. 703-706, 2001

上线时间:

January 2001

输出:

价格:

$38.00