Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation

摘要:

文章预览

信息:

期刊:

编辑:

G. Pensl, D. Stephani and M. Hundhausen

页数:

99-102

引用:

Ö. Danielsson et al., "Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation", Materials Science Forum, Vols. 353-356, pp. 99-102, 2001

上线时间:

January 2001

输出:

价格:

$38.00