Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements

摘要:

文章预览

信息:

期刊:

编辑:

G. Ferenczi

页数:

631-636

引用:

A. Dörnen et al., "Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements", Materials Science Forum, Vols. 38-41, pp. 631-636, 1989

上线时间:

January 1991

输出:

价格:

$38.00