Recent Progress of AlGaN/GaN Heterojunction FETs for Microwave Power Applications

摘要:

文章预览

信息:

期刊:

编辑:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

页数:

1505-1510

DOI:

10.4028/www.scientific.net/MSF.389-393.1505

引用:

H. Miyamoto "Recent Progress of AlGaN/GaN Heterojunction FETs for Microwave Power Applications", Materials Science Forum, Vols. 389-393, pp. 1505-1510, 2002

上线时间:

April 2002

输出:

价格:

$35.00

为了查看相关信息, 需 Login.