SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC

摘要:

文章预览

信息:

期刊:

编辑:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

页数:

307-310

DOI:

10.4028/www.scientific.net/MSF.389-393.307

引用:

C. Jacquier et al., "SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC", Materials Science Forum, Vols. 389-393, pp. 307-310, 2002

上线时间:

April 2002

输出:

价格:

$35.00

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