EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC

摘要:

文章预览

信息:

期刊:

编辑:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

页数:

497-500

引用:

N. Mizuochi et al., "EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC", Materials Science Forum, Vols. 389-393, pp. 497-500, 2002

上线时间:

April 2002

输出:

价格:

$38.00