Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization

摘要:

文章预览

信息:

期刊:

编辑:

Peder Bergman and Erik Janzén

页数:

395-398

DOI:

10.4028/www.scientific.net/MSF.433-436.395

引用:

V. Heera et al., "Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization", Materials Science Forum, Vols. 433-436, pp. 395-398, 2003

上线时间:

September 2003

输出:

价格:

$38.00

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