Bulk SiC Devices for High Radiation Environments

摘要:

文章预览

信息:

期刊:

编辑:

Roland Madar, Jean Camassel and Elisabeth Blanquet

页数:

1093-1096

引用:

W. Cunningham et al., "Bulk SiC Devices for High Radiation Environments", Materials Science Forum, Vols. 457-460, pp. 1093-1096, 2004

上线时间:

June 2004

输出:

价格:

$38.00

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DOI: https://doi.org/10.1109/5.90128

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DOI: https://doi.org/10.1109/16.536819

[4] M. Bruzzi, F. Nava, S. Russo, S. Sciortino, P. Vanni, Diam. Relat. Mater. 10 (2001) 657- 661.

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[6] Comparison of bulk and epitaxial 4-H SiC for radiation hard particle tracking, T. Quin et al., to be presented at IEEE (2003).