1,530V, 17.5mΩcm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization

摘要:

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信息:

期刊:

编辑:

Roland Madar, Jean Camassel and Elisabeth Blanquet

页数:

1157-1160

DOI:

10.4028/www.scientific.net/MSF.457-460.1157

引用:

L. Fursin et al., "1,530V, 17.5mΩcm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization ", Materials Science Forum, Vols. 457-460, pp. 1157-1160, 2004

上线时间:

June 2004

输出:

价格:

$35.00

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DOI: 10.1109/16.992876

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