X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC
p.1601
p.1601
Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers
p.1605
p.1605
Radiotracer Spectroscopy on Group II Acceptors in GaN
p.1609
p.1609
Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
p.1613
p.1613
An Ab Initio Study of Intrinsic Stacking Faults in GaN
p.1617
p.1617
AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart CutTM Technology
p.1621
p.1621
Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements
p.1625
p.1625
High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire
p.1629
p.1629
Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
p.1633
p.1633
Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements
摘要:
信息:
期刊:
Materials Science Forum (457-460卷)
编辑:
Roland Madar, Jean Camassel and Elisabeth Blanquet
页数:
1625-1628
引用:
R. Aubry et al., "Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements", Materials Science Forum, Vols. 457-460, pp. 1625-1628, 2004
上线时间:
June 2004
价格:
$38.00
允许: