Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements

R. Aubry et al., "Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements", Materials Science Forum, Vols. 457-460, pp. 1625-1628, 2004

上线时间:

June 2004

作者:

R. Aubry, J.-C. Jacquet, Christian Dua, H. Gérard, B. Dessertenne, M.A. di Forte-Poisson, Yvon Cordier, S.L. Delage

关键字:

AlGaN/GaN HEMT, Micro-Raman Scattering, Pulse I-V, Thermal Measurement

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RIS, BibTeX

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$41.00

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文章题目页数

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摘要: GaN films are grown on Si(111) with low-temperature GaN (LT-GaN) layers as buffer layers by hydride vapor phase epitaxy (HVPE). The LT-GaN layers are deposited at different temperatures ranging from 400 to 900 °C. The surface property, the structure and optical properties of the GaN films with different LT-GaN layers are studied. When deposition temperature of LT-GaN layer is 600 °C, the GaN film shows the best properties.

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Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates

作者: Yvon Cordier, Marc Portail, Sébastien Chenot, Olivier Tottereau, Marcin Zielinski, Thierry Chassagne

摘要: Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows reducing the stress in GaN films due to both lower lattice and thermal expansion coefficient mismatch, and can provide better heat dissipation. In this work, we first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these films. Both the structural quality and the electrical behavior of these structures show the feasibility of this approach.

1277

AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance

作者: Wael Jatal, Katja Tonisch, Uwe Baumann, Frank Schwierz, Jörg Pezoldt

摘要: Al0.35Ga0.65N/GaN- and Al0.2Ga0.8N/AlN/GaN-heterostructures high electron mobility transistors (HEMTs) with a gate length (LG) varying from 1.2 to 0.08 µm were fabricated on silicon Si(111) substrates using a 3C-SiC transition layer. Metal organic chemical vapour deposition (MOCVD) was used to growth the AlGaN-heterostructures and a low pressure chemical vapour deposition (LPCVD) to create the 3C-SiC(111) transition layer preventing Ga-induced melt back etching and Si-out diffusion. Reduced Al content and an AlN interlayer improved the device performance. The HEMTs with LG=0.08µm had a maximum drain current density of 1.25 A/mm and a peak extrinsic transconductance of 400 mS/mm. A unity current gain cut-off frequency (ƒT) of 180 GHz and maximum frequency (ƒmax) of 70 GHz were measured on these devices.

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