Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC

摘要:

文章预览

信息:

期刊:

编辑:

Roland Madar, Jean Camassel and Elisabeth Blanquet

页数:

443-448

引用:

A. Gali et al., "Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 443-448, 2004

上线时间:

June 2004

输出:

价格:

$38.00