PRICM-5

475-479卷

doi: 10.4028/www.scientific.net/MSF.475-479

文章题目 页数

作者: K.J. Liao, W.L. Wang, Y.T. Wang, J.W. Lu, X.L. Sun
摘要: The field electron emission from carbon nanotube films on polycrystalline diamond films was investigated. The carbon nanotubes and diamond films on Si substrates were prepared by a conventional hot filament chemical vapour deposition. The films obtained were characterized by scanning electron microscopy and Raman spectroscopy. The field emission properties of the samples were measured in an ion-pumped vacuum chamber at a pressure of 10-6 Pa.. The experimental results showed that the field emission behaviours of carbon nanotubes/diomond films structure have greatly been improved as compared with carbon nanotubes and diamond films, respectively. A turn-on field of 1.0 V/µm and a maximum current of 500 µA at 1.5 V/µm were observed, which were lower than those of carbon nanotubes and polycrystalline diamond films, respectively. This improvement was attributed to the tip shape of sample surface, which provided an additional local increase in electric field at the tube ends.
3587
作者: Shuang Lin Yue, C.Y. Zhi, Chang Zhi Gu
摘要: By using radio frequency magnetron reactive sputtering system, (002)-oriented AlN film was deposited on W tip. The field emission from (002)-oriented AlN film on W tip was studied and compared with that from the bare W tip in a high vacuum (≤10-6 Pa) chamber. It indicated that the enhanced electron emission could be obtained from the (002)-oriented AlN film on W tip. The corresponding Fowler-Nordheim plot of AlN presented a nonlinear behavior in nature related the high resistivity of AlN. Furthermore, the current-electric field (I-E) curve presented excellent reproducibility checked by repeated measurements.
3591
作者: Lan Zhang, Hui Zhong Ma, Xue Xiang Li, Ning Yao, Bing Lin Zhang
摘要: Carbon nitride nanotubes (CN-NT) thin films were prepared on Ni-Cr coated glass substrate by microwave plasma enhanced chemical vapor deposition at a relatively low temperature of 600~650 °C. The morphology of the films were observed by scanning electron microscopy. The microstructure of the film were analyzed by x-ray photoelectron spectroscopy, x-ray diffraction, and Raman spectroscopy. The characteristics of field emission of CN-NT thin films were measured. Experimental results indicate that the film structure and properties of the field electron emission are related to flow ratio of N2 to CH4. When the flow ratio of N2 to CH4 was 3.3, the obtained film had a better field electron emission characteristics. The turn-on field of the film was 3.7 V/µm . The current density was 413.3 µA/cm2 at an electric field of 8 V/µm.
3595
作者: Fan Xiu Lu, Yu Mei Tong, X.H. Gao, Wei Zhong Tang, Cheng Ming Li, Guang Chao Chen
摘要: In the present investigation a specially designed ceramic interlayer, which is able to supply suitable protection of the ZnS substrate against chemical attack by atomic hydrogen, and is helpful to reduce the thermal stress, has been developed. Nano-crystalline diamond films were successfully deposited on to the pre-coated multi-spectrum ZnS. It was found that diamond nucleation on the ceramic interlayer could be greatly enhanced by a metal or semiconductor mask placed on top of the pre-coated ZnS substrate, whereas diamond nucleation will not happen even by long time seeding in ultrasonic bath with fine diamond powder suspension. It was found that diamond nucleation is induced by the presence of the metal or semiconductor mask. To our knowledge this kind of phenomena of induced nucleation has not been reported. Detailed results and discussions were presented.
3599
作者: S.G. Wang, P.J. Sellin, Q. Zhang, Fan Xiu Lu, Wei Zhong Tang, A. Lohstroh
摘要: In this study, X-ray detectors with coplanar metal-semiconductor-metal structure, were fabricated employing high quality chemical vapour deposited (CVD) diamond film grown by a direct current arc jet plasma system. In which the electrical contacts with dimension of 25 µm in width with a 25 µm inter-electrode spacing, were patterned on the growth side of the diamond film using lift-off technology. The performance of the fabricated detectors was evaluated by steady-state X-ray illumination. The photoconductivity of the diamond detectors was found to linearly increase with increase in the X-ray photon flux. This demonstrates that high quality CVD diamond can be used for X-ray detectors.
3605
作者: Y.L. Zhou, Guang Chao Chen, Guoan Chen, Cheng Ming Li, Yu Mei Tong, Fan Xiu Lu
摘要: Structure-designed free-standing diamond films have been fabricated by DC plasma jet method. The different dominant crystalline surface distributions were obtained under different deposition conditions. The as-grown films were polished by thermal chemical method. For the same crystalline structure, the removal rate was strongly affected by polishing parameters, such as polishing temperature, polishing time and applied pressure. The experimental results also showed that the dominant surface distribution in the films affected the polishing removal rate very much.
3611
作者: Hui Qing Li, Cheng Ming Li, Guang Chao Chen, Fan Xiu Lu, Yu Mei Tong
摘要: Interfaces between Mo substrate and free-standing diamond films prepared by DC arc plasma jet operated at gas recycling mode were investigated, including for the first time used and multi-time used substrate. The morphology, phase composition and bonding state of elements in the interface between substrates and diamond films were examined by optical microscopy, XRD and XPS. The profiles of carbon concentration of Mo substrates were measured by GDOES. It showed that Mo2C and MoC were formed on the first time used Mo substrate, and MoC was found on diamond films nucleation side after detachment. It suggested that MoC was peeled off from Mo substrate. The stable Mo2C on Mo substrate was formed after multi-time use of Mo substrate. However, MoC has not been found on it. The thickness of carburizing layer on the first time used Mo substrate is up to 30µm, and the carburizing layer on the multi-time used substrate is much thicker than that on the first used. The amorphous carbon in the surface of the substrate and nucleation side of diamond films was found by XPS, including for the first time used and multi-time used substrate.
3615
作者: H.W. Choi, M.W. Moon, T.Y. Kim, Kwang Real Lee, Kyu Hwan Oh
3619
作者: Xu Zhang, Hui Xing Zhang, Xiang Ying Wu, Tong He Zhang
摘要: The tetrahedral amorphous carbon films are attracting materials because of their properties similar to diamond, such as high hardness, resistivity, optical transparency, chemical inertness and low coefficient of friction. These properties make it ideal for wear resistance application on cutting tools, automotive component, aerospace components and orthopedic prosthesis etc. In this paper the structures, mechanical properties and wear resistance of the tetrahedral amorphous carbon films deposited on silicon under lower pulse bias voltage by filtered catholic vacuum arc deposition system have been investigated. The high quality tetrahedral amorphous carbon film has been obtained. The hardness and elastic modulus of the low stress tetrahedral amorphous carbon films are higher than 60Gpa and 380Gpa respectively determined by nano indentation tests. The friction performance of the tetrahedral amorphous carbon films was also studied by SRV tests, the results show: the tetrahedral amorphous carbon films have much lower wear rate than that of silicon substrate.
3623
作者: Jia Qi Zhu, Jie Cai Han, Song He Meng, Xiao Dong He, Manlin Tan, Wei Gao
摘要: To investigate the effects of film thickness on Raman characterization and intrinsic stress of tetrahedral amorphous carbon and ascertain the correlations between stress and Raman spectra, the ta-C films with different film thickness were deposited on the polished P-type (100) c-silicon substrate with the same conditions by the filtered cathodic vacuum arc technology. The film thickness was measured by the surface profiler and the atomic force microscope; stress was calculated according to the curvature of the stress samples examined by the surface profiler; the microstructure of the films was characterized by the Ramanscope. It has been shown that the stress drops down continuously and the dropping rate turns mild with the increase of film thickness. When the film thickness surpasses 30 nm, the compressive stress is kept at less than 5 GPa. The intensity of the first and second order peak of the c-Si substrate in the visible Raman spectra gradually depresses with the increase of thickness. However, the FWHM is minimal and the maximal intensity is highest from 50 nm to 80 nm, accordingly the clearest Raman signals can be acquired in this scale. Additionally, the position of the asymmetric broad peak gradually shifts towards the lower wavenumber with the increase of thickness and the decease of intrinsic stress.
3627

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