Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers

摘要:

文章预览

A method was developed in our laboratory to grow low basal plane dislocation (BPD) density and BPD-free SiC epilayers. The key approach is to subject the SiC substrates to defect preferential etching, followed by conventional epitaxial growth. It was found that the creation of BPD etch pits on the substrates can greatly enhance the conversion of BPDs to threading edge dislocations (TEDs) during epitaxy, and thus low BPD density and BPD-free SiC epilayers are obtained. The reason why BPD etch pits can promote the above conversion is discussed. The SiC epilayer growth by this method is very promising in overcoming forward voltage drop degradation of SiC PiN diodes.

信息:

期刊:

编辑:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

页数:

243-246

DOI:

10.4028/www.scientific.net/MSF.527-529.243

引用:

Z. H. Zhang and T. S. Sudarshan, "Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers", Materials Science Forum, Vols. 527-529, pp. 243-246, 2006

上线时间:

October 2006

输出:

价格:

$35.00

[1] S. Ha, P. Mieszkowski, M. Skowronski and L.B. Rowland: J. Cryst. Growth 244 (2002), p.257.

[2] T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki and K. Arai: J. Cryst. Growth 260 (2004), p.209.

[3] T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki and K. Arai: J. Cryst. Growth 271 (2004), p.1.

[4] Z. Zhang, Y. Gao and T. S. Sudarshan: Electrochem. Solid-State Lett. 7 (2004), p. G264.

[5] H. Klapper and H. Küppers: Acta Cryst. A 29 (1973), p.495.

[6] H. Klapper: Mater. Chem. & Phys. 66 (2002).

为了查看相关信息, 需 Login.