Photoluminescence of Phosphorous Doped SiC

摘要:

文章预览

We report the results of a photoluminescence (PL) study of n-type phosphorus-doped SiC epilayers. The PL spectra consist of a set of sharp lines that are interpreted as excitons bound to the P donor with zero-phonon lines which have photon energies very close to the nitrogen-bound excitons and followed by phonon assisted replicas.

信息:

期刊:

编辑:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

页数:

589-592

引用:

A. Henry and E. Janzén, "Photoluminescence of Phosphorous Doped SiC", Materials Science Forum, Vols. 527-529, pp. 589-592, 2006

上线时间:

October 2006

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价格:

$38.00