Photoluminescence of Phosphorous Doped SiC
We report the results of a photoluminescence (PL) study of n-type phosphorus-doped SiC epilayers. The PL spectra consist of a set of sharp lines that are interpreted as excitons bound to the P donor with zero-phonon lines which have photon energies very close to the nitrogen-bound excitons and followed by phonon assisted replicas.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
A. Henry and E. Janzén, "Photoluminescence of Phosphorous Doped SiC", Materials Science Forum, Vols. 527-529, pp. 589-592, 2006