Shallow P Donors in 3C-, 4H- and 6H-SiC

摘要:

文章预览

EPR spectra originating from phosphorus shallow donors occupying silicon sites in 3C-, 4H-, and 6H-SiC are identified by using CVD grown films in which the interference from the signals from the nitrogen shallow donors is practically absent. Phosphorus donors occupying both silicon and carbon sites are observed in high-energy phosphorus ion implanted semi-insulating 6H-SiC which was also free from the interference from the signals from the nitrogen shallow donors.

信息:

期刊:

编辑:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

页数:

593-596

引用:

J. Isoya et al., "Shallow P Donors in 3C-, 4H- and 6H-SiC", Materials Science Forum, Vols. 527-529, pp. 593-596, 2006

上线时间:

October 2006

输出:

价格:

$38.00

[1] M. Laube, F. Schmid, G. Pensl, G. Wagner, M. Linnarsson and M. Maier: J. Appl. Phys. 92 (2002), p.549.

[2] A.I. Veinger, A.G. Zabrodskii, G.A. Lomakina and E.N. Mokhov: Fiz. Tverd. Tela 28 (1984), p.1659 [Sov. Phys. Solid State 28 (1986), p.917].

[3] E.N. Kalabukhova, S.N. Lukin and E.N. Mokhov: Fiz. Tverd. Tela 35 (1993), p.703 [Phys. Solid State 35 (1993), p.361].

[4] E.N. Kalabukhova, S.N. Lukin, E.N. Mokhov, M. Feege, S. Greulich-Weber and J-M. Spaeth: Inst. Phys. Conf. Ser. 137 (1994), p.215.

[5] S. Greulich-Weber: phys. stat. sol. (a) 162 (1997), p.95.

[6] P.G. Baranov, I.V. Ilyn, E.N. Mokhov, H.J. von Bardeleben and J.L. Cantin: Phys. Rev. B 66 (2002), p.165206.

[7] E. Rauls, M.V.B. Pinheiro, S. Greulich-Weber and U. Gerstmann: Phys. Rev. B. 70, (2004), p.85202.

[8] J. Isoya, T. Ohshima, A. Ohi, N. Morishita and H. Itoh: Nucl. Instr. Meth. Phys. Res. B 206 (2003), p.965.

[9] A. Henry and E. Janzén: Mater. Sci. Forum 483-485 (2005), p.101.

[10] N. T. Son et al.: Mater. Sci. Forum 483-485 (2005), p.515.