Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration

摘要:

文章预览

4H-SiC implanted with high dose of phosphorus has been shown to exhibit lower sheet resistance than 4H-SiC implanted with high dose of nitrogen. In this paper, we have implanted various doses (1x1014cm-2, 2x1014cm-2, 1x1015cm-2 and 4x1015cm-2) of phosphorus into 4H-SiC in order to extract the ionization energy of phosphorus in 4H-SiC as a function of the doping concentration. Variable temperature Hall effect measurements were performed in the temperature range from 60-600K. Least square fits using the charge neutrality equation with two donor levels were used to extract the ionization energies and donor concentrations from the measured data. The ionization energies for both, the hexagonal (53meV, 49meV and 26meV) and the cubic (109meV, 101meV and 74meV) site decreased as the donor concentration (5x1018cm-3, 9.8x1018cm-3 and 3.4x1019cm-3) increased.

信息:

期刊:

编辑:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

页数:

597-600

引用:

S. Rao et al., "Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration", Materials Science Forum, Vols. 527-529, pp. 597-600, 2006

上线时间:

October 2006

输出:

价格:

$38.00

[1] V. Khemka, R. Patel, N. Ramungul, T.P. Chow, M. Ghezzo and J. Kretchmer: J. Electron. Mater. 28 (3) (1999), p.167.

[2] M.A. Capano, R. Santhakumar, R. Venugopal, M.R. Melloch and J.A. Cooper, Jr.: J. Electron. Mater. 29 (2) (2000), p.210.

[3] M. Laube, F. Schmid, G. Pensl, G. Wagner, M. Linnarsson and M. Maier: J. Appl. Phys. 92 (1) (2002), p.549.

[4] M.A. Capano, J.A. Cooper, Jr., M.R. Melloch, A. Saxler and W.C. Mitchel: J. Appl. Phys. 87 (12) (2000), p.8773.

[5] Y. Gao, Y. Tang, M. Hoshi and T.P. Chow: Solid-State Electronics 44 (2000), p.1875.

[6] S. Greulich-Weber: Phys. Stat. Sol. A 162 (1997), p.95.

[7] C. Persson and U. Lindefelt: J. Appl. Phys. 82 (11) (1997), p.5496.

[8] G. Wellenhofer and U. Rössler: Phys. Stat. Sol. B 202 (1997), p.107.

[9] C.S. Hung and J.R. Gliessman: Physical Review 96 (5) (1954), p.1226.

[10] G.L. Pearson and J. Bardeen: Physical Review 75 (5) (1949), p.865.

[11] R. Wang, I. B. Bhat, and T. P. Chow: J. Appl. Phys. 92, (12) (2002), p.7587.

[12] I.G. Ivanov, A. Henry and E. Janzén: Physical Review B 71 (2005), 241201(R).