Ion Implantation Processing and Related Effects in SiC

摘要:

文章预览

A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p+-doped layers, and deactivation of N donors by ion-induced defects.

信息:

期刊:

编辑:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

页数:

781-786

DOI:

10.4028/www.scientific.net/MSF.527-529.781

引用:

B. G. Svensson et al., "Ion Implantation Processing and Related Effects in SiC", Materials Science Forum, Vols. 527-529, pp. 781-786, 2006

上线时间:

October 2006

输出:

价格:

$38.00

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