Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices

摘要:

文章预览

信息:

期刊:

编辑:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

页数:

787-790

DOI:

10.4028/www.scientific.net/MSF.527-529.787

引用:

M. Buzzo et al., "Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices", Materials Science Forum, Vols. 527-529, pp. 787-790, 2006

上线时间:

October 2006

输出:

价格:

$38.00

[1] M. Stangoni, M. Ciappa, M. Buzzo, M. Leicht, and W. Fichtner: Microelectronics Reliability 42 (2002), pp.1701-1706.

DOI: 10.1016/s0026-2714(02)00215-9

[2] F. Giannazzo, L. Calcagno, V. Raineri, L. Ciampolini, M. Ciappa, and E. Napoletani: Applied Physics Letters Vol. 79, No. 8 (2001).

[3] M. Buzzo, M. Leicht, T. Schweinböck, M. Ciappa, M. Stangoni, and W. Fichtner: Microelectronics Reliability 44 (2004), pp.1681-1686.

[4] Information on http: /www. synopsis. com.

[5] P.O.A. Persson, L. Hultman, M.S. Janson, A. Hallen, R. Yakimova, D. Pankin, and W. Skorupa: J. Appl. Phys. Vol. 92 No. 5 (2002), pp.2501-2505.

为了查看相关信息, 需 Login.