Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

摘要:

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Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the silicon carbide-silicon dioxide interface. In this work a comparison between a wet oxidation and an oxidation in N2O ambient diluted in N2 is proposed. The interface state density Dit near the conduction-band edge of SiC has been evaluated by conventional C-V measurements obtaining results similar or better than the literature data. Furthermore, the slow trapping phenomena have been studied and preliminary results are reported.

信息:

期刊:

编辑:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

页数:

979-982

引用:

A. Poggi et al., "Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient", Materials Science Forum, Vols. 527-529, pp. 979-982, 2006

上线时间:

October 2006

输出:

价格:

$38.00

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