How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism



We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on various α-SiC substrates, namely on- and off-axis for both 4H and 6H-SiC(0001), Si and C faces. The Si-Ge melts, which Si content was varied from 25 to 50 at%, were fed by 3 sccm of propane. The growth temperature was varied from 1200 to 1600°C. It was found that singledomain 3C-SiC layers can be obtained on 6H-SiC off and on-axis and 4H-SiC on-axis, while the other types of substrate gave twinned 3C-SiC material. As a general rule, one has to increase temperature when decreasing the Si content of the melt in order to avoid DPB formation. It was also found that twinned 3C-SiC layers form at low temperature while homoepitaxy is achieved at high temperature.




N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




M. Soueidan et al., "How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism", Materials Science Forum, Vols. 556-557, pp. 187-190, 2007


September 2007




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[11] -20] 50 µm b Fig. 4: surface morphology of single-domain 3C-SiC layers grown by VLS a) on 6HSiC 3. 5°off at 1300°C in Si50Ge50 and b) on 4H-SiC on-axis at 1350°C in Si25Ge75.