Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)

摘要:

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A set of three 4H-SiC wafers with manufacturer specified micropipe density of 0-5 cm-2 were characterized by x-ray diffraction (XRD) maps before and after final chemical-mechanical polish. After final polish, the wafers were also investigated with atomic force microscopy, radius of curvature measurements and cross-polarization (x-pol) mapping. It was found that there was largely a lack of correlation between the XRD and x-pol maps, which strongly suggests that x-pol is insensitive to crystalline imperfections to which XRD is sensitive.

信息:

期刊:

编辑:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

页数:

235-238

DOI:

10.4028/www.scientific.net/MSF.556-557.235

引用:

D. K. Gaskill et al., "Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)", Materials Science Forum, Vols. 556-557, pp. 235-238, 2007

上线时间:

September 2007

输出:

价格:

$38.00

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