Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC



We report a comparison of continuous-wave photoluminescence spectra with spatiallyresolved micro-photoluminescence data collected at low temperature on as-grown stacking faults in a 4H-SiC epitaxial layer. We find that the defects have a large triangular shape (50 μm x 50 μm x 50 μm) and that the maximum signal wavelength shifts when scanning across one triangular defect. These results show that the built-in electric field in the stacking fault well can be screened, more or less depending on the incoming light intensity.




N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




S. Juillaguet et al., "Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 351-354, 2007


September 2007




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