Silicon Carbide and Related Materials 2007

600-603卷

doi: 10.4028/www.scientific.net/MSF.600-603

文章题目 页数

作者: Toru Hiyoshi, Tsutomu Hori, Jun Suda, Tsunenobu Kimoto

摘要: A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. An improved bevel mesa structure, nearly vertical...

995
作者: Tomokatsu Watanabe, Yukiyasu Nakao, Keiko Fujihira, Naruhisa Miura, Yoichiro Tarui, Masayuki Imaizumi, Tatsuo Oomori

摘要: A major crystalline defect which causes a pn junction reverse leakage current has been identified. A faintish stripe defect (FSD), the main cause...

999
作者: Peter A. Losee, Y. Wang, Can Hua Li, Santosh K. Sharma, I. Bhat, T. Paul Chow, Ronald J. Gutmann

摘要: The impact of anode layers on the electrical characteristics of 10kV 4H-SiC PiN diodes has been evaluated in this work. Co-fabricated diodes with...

1003
作者: Michael E. Levinshtein, Tigran T. Mnatsakanov, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das, Brett A. Hull

摘要: Self-heating in high-voltage 4H-SiC PiN diodes has been studied experimentally and theoretically in dc and 8-ms single pulse modes. To simulate...

1007
作者: H. Vang, Sigo Scharnholz, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Dominique Planson

摘要: This paper presents a comparison of the reverse characteristics of mesa terminated PiN diodes fabricated on n- and p-type 4H-SiC substrates. For...

1011
作者: Ryosuke Ishii, Koji Nakayama, Hidekazu Tsuchida, Yoshitaka Sugawara

摘要: This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm x 4...

1015
作者: Konstantinos Zekentes, Volodymyr V. Basanets, Mykola S. Boltovets, Valentyn A. Kryvutsa, Volodymyr O. Orechovskij, Vasyl I. Simonchuk, Alexander V. Zorenko, Leonid P. Romanov, Aleksey V. Kirillov, Edwige Bano, Nicolas Camara

摘要: Multi-diode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized. The three-diode...

1019
作者: Masataka Satoh, Shingo Miyagawa, T. Kudoh, Akihiro Egami, Kenji Numajiri, Masami Shibagaki

摘要: The I-V characteristics of p+n 4H-SiC diode formed by Al ion implantation have been investigated as a function of annealing temperature. Al ions...

1023
作者: Francesco Moscatelli, Fabio Bergamini, Antonella Poggi, Mara Passini, Fabrizio Tamarri, Marco Bianconi, Roberta Nipoti

摘要: The current-voltage characteristics of Al+ implanted 4H-SiC p+n junctions show an important reduction of leakage currents with diode aging at...

1027
作者: Tarek Ben Salah, Samien Risaletto, Christophe Raynaud, Kamel Besbes, Dominique Bergogne, Dominique Planson, Hervé Morel

摘要: A novel experimental set-up is developed and validated to characterize high voltage diodes in transient switching mode. Parameters extracted from...

1031

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