Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations

摘要:

文章预览

1 MeV ion implantations of 4H SiC have been performed to various doses with ion probes of 5 µm diameter. Defect introduction has been studied by microscopic photoluminescence.

信息:

期刊:

编辑:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

页数:

409-412

引用:

J. W. Steeds et al., "Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations", Materials Science Forum, Vols. 615-617, pp. 409-412, 2009

上线时间:

March 2009

输出:

价格:

$38.00