Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations

摘要:

文章预览

1 MeV ion implantations of 4H SiC have been performed to various doses with ion probes of 5 µm diameter. Defect introduction has been studied by microscopic photoluminescence.

信息:

期刊:

编辑:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

页数:

409-412

DOI:

10.4028/www.scientific.net/MSF.615-617.409

引用:

J. W. Steeds et al., "Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations", Materials Science Forum, Vols. 615-617, pp. 409-412, 2009

上线时间:

March 2009

输出:

价格:

$35.00

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