Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer



Metal oxide semiconductor field effect transistors (MOSFETs) using SiC on insulator (SiC-OI) substrate with the structure of 3C-SiC (100)/SiO2/Si have been fabricated. SiC-OI substrates with SiC thicknesses of 100 nm and 600 nm are employed as starting materials and aluminum ions are implanted for p-regions or channel regions with a multi-implantation technique. Afterward, to form the source and drain regions, phosphorus ions are implanted. The gate oxide layer is grown in dry thermal oxidation, followed by post-oxidation annealing. Nickel is used as a contact material for the source and drain region, and aluminum is used for the gate material. From Id-Vd characteristics, 600 nm SiC-OI MOSFET is superior to 100 nm SiC-OI MOSFET. It is might that the crystalline quality of surface SiC layers affects the performance of MOSFET. SiC-OI MOSFET is operated successfully for the first time.




Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller






T. Tanehira et al., "Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer ", Materials Science Forum, Vols. 645-648, pp. 1009-1012, 2010


April 2010




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