Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation



This paper investigates the transient induced currents by energetic carbon ions in 6H-SiC MOSFETs and the carrier dynamic response due to such a heavy ion collision is simulated by Technology Computer Aided Design (TCAD). It was found that a heavy ion strike induces a bipolar effect on the transistor, whereby the current transients can vary in both polarities. And this has been attributed to the inherent in the MOSFET is a parasitic bipolar junction transistor.




Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller




K. K. Lee et al., "Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation", Materials Science Forum, Vols. 645-648, pp. 1013-1016, 2010


April 2010




[1] J.M. McGarrity, F.B. McLean, W.M. DeLancey, J. Plamour, C. Carter, J. Edmond, R.E. Oakley, IEEE Trans. Nucl. Sci. NS39, (1992), p. (1974).


[2] K.K. Lee, T. Ohshima, H. Itoh, IEEE Trans. Nucl. Sci. Vol. 50, (2003), p.194.

[3] J.S. Laird, T. Hirao, H. Mori, S. Onoda, T. Kamiya, H. Itoh, Nucl. Instrument Method B Vol. 181 (2001), p.87.

[4] C.M. Hsieh, P.C. Murley, R.R. O'Brien, IEEE Electron. Device Lett. Vol. 2, (1981), p.103.

[5] H.W. Kraner, R. Beuttenmuller, T. Ludlam, A. L. Hanson, K.W. Jones, V. Radeka, IEEE Trans. Nucl. Sci. Vol. 30 (1983), p.405.

[6] DAVINCI User's Manual, (Synopsys, 2003).

[7] J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, (1985).

[8] E.J. Kobetich, R. Katz, Phys. Rev. Vol. 170 (1968), p.391.

[9] M. Ruff, H. Mitlehner, R. Helbig, IEEE Trans. Electron Devices Vol. 41 (1994), p.1040.

[10] A. Oluwole, A.R. Witulski, L.W. Massengill, B.L. Bhuva, P. R. Fleming, M. L. Alles, A. L. Sternberg, J.D. Black, R. D. Schrimpf, IEEE Trans. Nucl. Sci. Vol. 53, (2006) p.3253.