Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation

摘要:

文章预览

This paper investigates the transient induced currents by energetic carbon ions in 6H-SiC MOSFETs and the carrier dynamic response due to such a heavy ion collision is simulated by Technology Computer Aided Design (TCAD). It was found that a heavy ion strike induces a bipolar effect on the transistor, whereby the current transients can vary in both polarities. And this has been attributed to the inherent in the MOSFET is a parasitic bipolar junction transistor.

信息:

期刊:

编辑:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

页数:

1013-1016

DOI:

10.4028/www.scientific.net/MSF.645-648.1013

引用:

K. K. Lee et al., "Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation", Materials Science Forum, Vols. 645-648, pp. 1013-1016, 2010

上线时间:

April 2010

输出:

价格:

$38.00

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