Fabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and Voltage



This paper describes fabrication and properties of polycrystalline 3C-SiC micro heaters built on AlN(0.1 μm)/3C-SiC(1.0 μm) suspended membranes using surface micromachining technology. 3C-SiC and AlN semiconductors which have a large energy band gap and very low lattice mismatch were used as sensors in harsh environment micro electromechanical system (MEMS) applications in this work. The 3C-SiC thin film was simultaneously used as a resistance of temperature detector (RTD) and micro heater for detecting heated temperature correctly. The thermal coefficient of resistance (TCR) of the implemented 3C-SiC RTD is about -5200 ppm/°C in the temperature range from 25°C to 50°C and -1040 ppm/°C at 500°C. The 3C-SiC micro heater generates about 500°C of heat at 10.3 mW. Moreover, 3C-SiC micro heaters stand at higher applied voltages than case of Pt micro heaters.




Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller




G. S. Chung and J. M. Jeong, "Fabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and Voltage ", Materials Science Forum, Vols. 645-648, pp. 1085-1088, 2010


April 2010




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