2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

摘要:

文章预览

Channel mobility properties of SiC and GaN based MOSFETs and AlGaN/GaN HEMTs are compared in this paper. For a similar active area, the specific on-resistance of the MOSFET is much larger than the on-resistance for the HEMT, which is depending on the electron mobility in their respective channels. Physically-based models are used to fit this experimental transistor mobility.

信息:

期刊:

编辑:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

页数:

1207-1210

引用:

A. Pérez-Tomás et al., "2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility", Materials Science Forum, Vols. 645-648, pp. 1207-1210, 2010

上线时间:

April 2010

输出:

价格:

$38.00

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