Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

摘要:

文章预览

The influence of stacking fault (SF) generation on the reverse blocking characteristics has been investigated on SiC 10 kV, 5 A Merged PiN (MPS) diodes. For the first time, we have observed that the generation of SFs under forward biased stress increases the reverse leakage current. In addition, the presence of a secondary diode formed by the electrical stress was observed and attributed to the breakdown voltage failure on certain devices.

信息:

期刊:

编辑:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

页数:

331-334

DOI:

10.4028/www.scientific.net/MSF.645-648.331

引用:

Q. C. J. Zhang et al., "Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes", Materials Science Forum, Vols. 645-648, pp. 331-334, 2010

上线时间:

April 2010

输出:

价格:

$35.00

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[1] [2] [3] [4] 0 5 10 15 20 VF (V) IF (A) Pre.

[15] min.

[60] min. (c) VR (V) IR (A) Pre.

[15] min.

[60] min. Fig. 7 UVPL images for MPS-3 before (a) and after.

[45] minutes stress (b). Arc (b) (a).

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