Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
The influence of stacking fault (SF) generation on the reverse blocking characteristics has been investigated on SiC 10 kV, 5 A Merged PiN (MPS) diodes. For the first time, we have observed that the generation of SFs under forward biased stress increases the reverse leakage current. In addition, the presence of a secondary diode formed by the electrical stress was observed and attributed to the breakdown voltage failure on certain devices.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Q. C. J. Zhang et al., "Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes", Materials Science Forum, Vols. 645-648, pp. 331-334, 2010