Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation

摘要:

文章预览

By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower temperatures than with conventional Si sublimation. Therefore, the degradation of the initial SiC surface morphology can be avoided. The layers of graphene are characterized by low energy electron diffraction (LEED), angle resolved ultraviolet photoelectron spectroscopy (ARUPS), and atomic force microscopy (AFM). On SiC the graphene lattice is rotated by 30o in comparison to preparation by annealing in UHV alone.

信息:

期刊:

编辑:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

页数:

593-596

DOI:

10.4028/www.scientific.net/MSF.645-648.593

引用:

A. Al-Temimy et al., "Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation ", Materials Science Forum, Vols. 645-648, pp. 593-596, 2010

上线时间:

April 2010

输出:

价格:

$35.00

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