Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics

摘要:

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We have observed a noticeable increase in the instability of the I-V characteristics following an ON-state current stress, especially in the subthreshold region. An increased stretch-out and negative shift can give rise to increased leakage current in the OFF-state if proper precautions are not met to provide a proper margin for the threshold voltage. State-of-the-art 50-A MOSFETs exhibit less instability than previous 20-A devices, and devices that run hotter show a larger degradation.

信息:

期刊:

编辑:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

页数:

983-986

引用:

A. J. Lelis et al., "Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics ", Materials Science Forum, Vols. 645-648, pp. 983-986, 2010

上线时间:

April 2010

输出:

价格:

$38.00

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