4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
K. Kojima et al., "4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate", Materials Science Forum, Vols. 645-648, pp. 99-102, 2010