4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

摘要:

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We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

信息:

期刊:

编辑:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

页数:

99-102

引用:

K. Kojima et al., "4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate", Materials Science Forum, Vols. 645-648, pp. 99-102, 2010

上线时间:

April 2010

输出:

价格:

$38.00

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