Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices

摘要:

文章预览

We fabricated 4H-silicon carbide (SiC) Complementary Metal-Oxide-Semiconductor (CMOS) devices with wet gate oxidation processing. The channel properties of n-channel MOS Field-Effect-Transistor (NMOS) were controlled by buried channel (BC) structure. The electrical properties of CMOS devices depended on the doping concentration of the BC-layer (Nbc) for NMOS. The SiC CMOS inverters with high Nbc indicated fast operation at the delay time (Td) of 4.8 ns for supply voltage of 15 V. To our knowledge, Td obtained in this study is the smallest among the reported values for SiC CMOS inverters.

信息:

期刊:

编辑:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

页数:

995-998

引用:

M. Okamoto et al., "Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices ", Materials Science Forum, Vols. 645-648, pp. 995-998, 2010

上线时间:

April 2010

输出:

价格:

$38.00

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